Atomically thin semiconductors for future optoelectronics
The project targets the research and development of new two dimensional systems, the atomically thin layers of semiconducting transitions metal dichalcogenides (S-TMDs: MoS2, MoSe2, MoTe2, WSe2, WS2). Their electronic properties will be studied, new structures will be fabricated and prototypes of devices (optoelectronic and photovoltaic) will be tested. The objectives of the project are to: i) elucidate the properties of excitons and many-exciton systems in mono- and multi-layered S-TMDs and their heterostructures, ii) quantify the effect of doping on the optical response and determine the yet unknown band structure parameters, iii) study the optical orientation phenomena in S-TMD structures, aiming to enhance the polarization memory under new experimental conditions and in yet unexplored systems, and iv) implement the technological processes (on the laboratory scale) to fabricate the high quality and advanced structures and design and test the devices.
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