A universal process for overcoming the equilibrium crystal shape in crystal growth from the vapor phase
The goal of this project is to develop a universal process for overcoming the equilibrium crystal shape in gallium nitride (GaN) crystal growth from the vapor phase. Currently, the diameter of crystallized GaN decreases in time. Results of the project should allow deposition of thick single crystalline GaN boules with a uniform or expanding diameter. Crystallization process will be carried out on c-plane of native GaN seed. For this purpose, precise control of supersaturation on the crystal’s growing surface is necessary. The supersaturation should be reduced on the edges and sidewalls of the growing crystal. This way adsorption of the growth species on the sidewalls will be minimized, while the growth facet (c-facet) will be stabilized and grown out for an arbitrary time period. Such conditions will be achieved by controlling the thermal field around the growing crystal. The boule will reach its final shape by adapting to the thermal field and not take its equilibrium habit.
Your project description
To add a photo, description, specify a location or attach other materials about the project, you should fill out the form below. After clicking the “send” button, a message will be sent to you e-mail asking for confirmation. You must accept to submit the form. The EU Dot Map Guidelines and consent to the processing of personal data. materials will be sent to the editor of the site, who will publish it on the website after verification test.